onsemiMMBT3904TT1GGP BJT

Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-416 T/R

Compared to other transistors, the NPN MMBT3904TT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

Auf Lager: 183.000 Stück

Regional Inventory: 87.000

    Total53,70 €Price for 3000

    87.000 auf Lager: heute versandbereit

    • (3000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2331+
      Manufacturer Lead Time:
      22 Wochen
      Country Of origin:
      China
      • In Stock: 87.000 Stück
      • Price: 0,0179 €
    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2516+
      Manufacturer Lead Time:
      10 Wochen
      Country Of origin:
      China
      • In Stock: 96.000 Stück
      • Price: 0,0088 €