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onsemiMMBT3904WT1GGP BJT
Trans GP BJT NPN 40V 0.2A 150mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 mm |
| Verpackungsbreite | 1.24 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 | |
| Leitungsform | Gull-wing |
The NPN MMBT3904WT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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