Diodes IncorporatedMMBT3906LP-7GP BJT
Trans GP BJT PNP 40V 0.2A 1000mW 3-Pin X1-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.47 mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 0.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | X1-DFN |
| 3 | |
| Leitungsform | No Lead |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MMBT3906LP-7 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 460 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |