Infineon Technologies AGMMBT3906LT1HTSA1GP BJT
Trans GP BJT PNP 40V 0.2A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 60@100uA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 330 | |
| 250(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This specially engineered PNP MMBT3906LT1HTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |