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onsemiMMBT4401LT1GGP BJT
Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 0.95@15mA@150mA|1.2@50mA@500mA | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V | |
| 300 | |
| 250(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This NPN MMBT4401LT1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |