| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| 0.95@15mA@150mA|1.2@50mA@500mA | |
| -55 to 150 | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 100@150mA@1V|20@0.1mA@1V|40@1mA@1V|40@500mA@2V|80@10mA@1V | |
| 640 | |
| 250(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.5 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-723 |
| 3 | |
| Leitungsform | Flat |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MMBT4401M3T5G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |