Diodes IncorporatedMMBT4403T-7-FGP BJT
Trans GP BJT PNP 40V 0.6A 150mW 3-Pin SOT-523 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Small Signal | |
Single | |
1 | |
40 | |
40 | |
5 | |
0.95@15mA@150mA|1.3@50mA@500mA | |
0.4@15mA@150mA|0.75@50mA@500mA | |
0.6 | |
100@10mA@1V|100@150mA@2V|20@500mA@2V|30@0.1mA@1V|60@1mA@1V | |
150 | |
200(Min) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.75 |
Verpackungsbreite | 0.8 |
Verpackungslänge | 1.6 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-523 |
3 | |
Leitungsform | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MMBT4403T-7-F general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.