Diodes IncorporatedMMBT5551-7-FGP BJT

Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R

Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN MMBT5551-7-F general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

5.443.555 Stück: heute versandbereit

    Total0,03 €Price for 1

    • Service Fee  6,14 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2343+
      Manufacturer Lead Time:
      12 Wochen
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      China
         
      • Price: 0,0328 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2343+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 1.555 Stück
      • Price: 0,0328 €
    • (3000)

      heute versandbereit

      Increment:
      3000
      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2404+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 5.442.000 Stück
      • Price: 0,0211 €