Diodes IncorporatedMMBT5551-7-FGP BJT
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.95 | |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 0.98 mm |
Verpackungsbreite | 1.3 mm |
Verpackungslänge | 2.9 mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN MMBT5551-7-F general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.