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Diodes IncorporatedMMBTA06-7-FGP BJT

Trans GP BJT NPN 80V 0.5A 350mW 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTA06-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 350 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part if shipping to the United States

Auf Lager: 612.000 Stück

Quantity Increments of 3000 Minimum 3000
  • Ships from:
    Vereinigte Staaten von Amerika
    Date Code:
    2349+
    Manufacturer Lead Time:
    8 Wochen
    Country Of origin:
    China
    • Price: