Diodes IncorporatedMMBTA55-7-FGP BJT
Trans GP BJT PNP 60V 0.5A 350mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 0.98 mm |
Verpackungsbreite | 1.3 mm |
Verpackungslänge | 2.9 mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MMBTA55-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.