Diodes IncorporatedMMBTH10-7-FHF-BJT

Trans RF BJT NPN 25V 0.05A 300mW 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH10-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.

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2.975 Stück: heute versandbereit

    Total30,94 €Price for 823

    • Service Fee  6,60 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
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      Manufacturer Lead Time:
      8 Wochen
      Minimum Of :
      823
      Maximum Of:
      2975
      Country Of origin:
      China
         
      • Price: 0,0376 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      +
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 2.975 Stück
      • Price: 0,0376 €