Diodes IncorporatedMMDT5551-7-FGP BJT
Trans GP BJT NPN 160V 0.2A 320mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1@5mA@50mA | |
| -55 to 150 | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.2 | |
| 50 | |
| 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| 320 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.15 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN MMDT5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |