| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.57 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| Stiftanzahl | 4 |
| Leitungsform | Gull-wing |
The PNP MMJT350T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
