Micro Commercial ComponentsMMSS8550-L-TPGP BJT
Trans GP BJT PNP 25V 1.5A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 25 | |
| 6 | |
| 1.2@80mA@800mA | |
| 0.5@80mA@800mA | |
| 1.5 | |
| 120@100mA@1V | |
| 625 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Look no further than Micro Commercial Components' PNP MMSS8550-L-TP general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |