onsemiMMUN2132LT1GDigital-BJT
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 15@5mA@10V | |
| 4.7 | |
| 1 | |
| 0.25@1mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the PNP MMUN2132LT1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |