onsemiMMUN2240LT1GDigital-BJT
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 120@5mA@10V | |
| 47 | |
| 0.25@1mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Look no further than ON Semiconductor's NPN MMUN2240LT1G digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |