MagnaChip SemiconductorMPMD100B120RHIGBT-Module
Trans IGBT Module N-CH 1200V 150A 780W 7-Pin Case 7DM-3
| Compliant | |
| EAR99 | |
| Obsolete | |
| EA | |
| Automotive | Unknown |
| PPAP | Unknown |
| NPT | |
| N | |
| Dual | |
| 1200 | |
| 2.7 | |
| ±20 | |
| 780 | |
| 150 | |
| 0.25 | |
| -55 | |
| 150 | |
| Befestigung | Screw |
| Verpackungshöhe | 29.75(Max) |
| Verpackungsbreite | 62.5 |
| Verpackungslänge | 108.5 |
| Leiterplatte geändert | 7 |
| Lieferantenverpackung | Case 7DM-3 |
| 7 |
Don't be afraid to step up the amps when using this MPMD100B120RH infineon IGBT module from MagnaChip Semiconductor. Its maximum power dissipation is 780000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a dual configuration. This IGBT driver board has an operating temperature range of -55 °C to 150 °C. This device utilizes npt technology.
| EDA / CAD Models |