Central SemiconductorMPQ2222AGP BJT
Trans GP BJT NPN 40V 0.5A 1900mW 14-Pin TO-116 Sleeve
| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.8(Max) - 0.4(Min) |
| Verpackungsbreite | 6.6(Max) |
| Verpackungslänge | 19.3(Max) |
| Leiterplatte geändert | 14 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-116 |
| 14 | |
| Leitungsform | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN MPQ2222A general purpose bipolar junction transistor, developed by Central Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1900 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |