onsemiMPSA06RLRAGGP BJT

Trans GP BJT NPN 80V 0.5A 625mW 3-Pin TO-92 T/R

Jump-start your electronic circuit design with this versatile NPN MPSA06RLRAG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.