onsemiMSD1819A-RT1GGP BJT

Trans GP BJT NPN 50V 0.1A 150mW 3-Pin SC-70 T/R

Design various electronic circuits with this versatile NPN MSD1819A-RT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.

Import TariffMay apply to this part if shipping to the United States

13.789 Stück: Versand in vsl. 10 Tagen

    Total0,02 €Price for 1

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2043+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 13.789 Stück
      • Price: 0,018 €