IXYSMUBW50-12A8IGBT-Module

Trans IGBT Module N-CH 1200V 85A 350W 24-Pin E3

This MUBW50-12A8 infineon IGBT module from Ixys Corporation is an electronic switch that can handle large currents with little to zero gate current drive. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a hex configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 125 °C.

A datasheet is only available for this product at this time.