| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 35@5mA@10V |
| Typischer Eingangswiderstand (kOhm) | 10 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typisches Widerstandsverhältnis | 1 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.25@0.3mA@10mA |
| Max. Leistungsaufnahme (mW) | 338 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Minimum DC Current Gain Range | 30 to 50 |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.09 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-59 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the NPN MUN2211T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
