onsemiMUN2214T1GDigital-BJT

Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R

ON Semiconductor's NPN MUN2214T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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97.118 Stück: Versand in vsl. 10 Tagen

    Total0,10 €Price for 1

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1925+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 97.118 Stück
      • Price: 0,1012 €