| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.09 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-59 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Are you looking to build a digital signal processing device? The NPN MUN2233T1G digital transistor, developed by ON Semiconductor, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
