onsemiMUN5116DW1T1GDigital-BJT
Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Dual | |
| 50 | |
| 100 | |
| 160@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 1 | |
| 0.25@1mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| >=120 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 | |
| Leitungsform | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the PNP MUN5116DW1T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |