| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Typ | PNP |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 15@5mA@10V |
| Typischer Eingangswiderstand (kOhm) | 4.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typisches Widerstandsverhältnis | 1 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.25@1mA@10mA |
| Max. Leistungsaufnahme (mW) | 310 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 |
| Verpackungsbreite | 1.24 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the PNP MUN5132T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
