onsemiMUN5235T1GDigital-BJT

Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R

You can apply the benefits of traditional BJTs to digital circuits using the NPN MUN5235T1G digital transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Import TariffMay apply to this part

18 Stück: heute versandbereit

    Total0,14 €Price for 1

    • Service Fee  6,22 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1842+
      Manufacturer Lead Time:
      6 Wochen
      Minimum Of :
      1
      Maximum Of:
      18
      Country Of origin:
      China
         
      • Price: 0,1362 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1842+
      Manufacturer Lead Time:
      6 Wochen
      Country Of origin:
      China
      • In Stock: 18 Stück
      • Price: 0,1362 €