onsemiMUN5312DW1T1GDigital-BJT
Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 60@5mA@10V | |
| 22 | |
| 0.25@0.3mA@10mA | |
| -55 to 150 | |
| 1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the npn and PNP MUN5312DW1T1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |