onsemiMUN5313DW1T1GDigital-BJT
Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 47 | |
| 0.25@0.3mA@10mA | |
| -55 to 150 | |
| 1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 | |
| Leitungsform | Gull-wing |
ON Semiconductor's npn and PNP MUN5313DW1T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.
| EDA / CAD Models |