onsemiNCP5109ADR2GGate- und Leistungstreibern
Driver 2-OUT High Side/Low Side Half Brdg Non-Inv 8-Pin SOIC N T/R
Compliant | |
EAR99 | |
Active | |
8542.39.00.60 | |
Automotive | No |
PPAP | No |
High Side|Low Side | |
Non-Inverting | |
Half Bridge | |
2 | |
Dependent | |
IGBT|MOSFET | |
2 | |
160 | |
75 | |
170 | |
3.3V|5V | |
10 | |
20 | |
0.8(Max) | |
2.3(Min) | |
10|30 | |
178 | |
150 | |
Under Voltage Lockout | |
Yes | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5(Max) mm |
Verpackungsbreite | 4(Max) mm |
Verpackungslänge | 5(Max) mm |
Leiterplatte geändert | 8 |
Standard-Verpackungsname | SO |
Lieferantenverpackung | SOIC N |
8 | |
Leitungsform | Gull-wing |
Use the NCP5109ADR2G power driver from ON Semiconductor in your design to power on and off your gates. This device has a maximum propagation delay time of 170 ns and a maximum power dissipation of 178 mW. Its maximum power dissipation is 178 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has a maximum operating temperature of 150 °C. This device has a minimum operating supply voltage of -0.3 V and a maximum of 20 V.
EDA / CAD Models |