onsemiNCP5901BDR2GGate- und Leistungstreibern
Driver 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N T/R
Compliant | |
EAR99 | |
Active | |
8542.39.00.60 | |
Automotive | No |
PPAP | No |
High and Low Side | |
Inverting|Non-Inverting | |
2 | |
Synchronous | |
2 | |
35 | |
27(Typ) | |
35 | |
4.5 | |
13.2 | |
12.2(Typ) | |
0.7(Max) | |
3.4(Min) | |
4.5 | |
-10 | |
125 | |
Under Voltage Lockout | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5(Max) |
Verpackungsbreite | 4(Max) |
Verpackungslänge | 5(Max) |
Leiterplatte geändert | 8 |
Standard-Verpackungsname | SO |
Lieferantenverpackung | SOIC N |
8 | |
Leitungsform | Gull-wing |
Manage power passing through your transistors and gates with the use of ON Semiconductor's NCP5901BDR2G power driver. This device has a maximum propagation delay time of 35 ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has a minimum operating temperature of -10 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 13.2 V.
EDA / CAD Models |