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onsemiNGTB40N120FL2WGIGBT-Chip
Trans IGBT Chip N-CH 1200V 80A 535W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Field Stop II|Trench | |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 2 | |
| 80 | |
| 0.2 | |
| 652 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.25(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You won't need to worry about any lagging in your circuit with this NGTB40N120FL2WG IGBT transistor from ON Semiconductor. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 652000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |