onsemiNGTB50N120FL2WGIGBT-Chip
Trans IGBT Chip N-CH 1200V 100A 535W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This fast-switching NGTB50N120FL2WG IGBT transistor from ON Semiconductor will be perfect in your circuit. Its maximum power dissipation is 535000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |