onsemiNGTG35N65FL2WGIGBT-Chip
Trans IGBT Chip N-CH 650V 70A 300W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| NGTG35N65FL2WG | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.25(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The NGTG35N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 300000 mW. This device utilizes field stop ii|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |