onsemiNJD35N04GDarlington BJT

Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK Tube

Are you looking for an amplified current signal in your circuit? The NPN NJD35N04G Darlington transistor from ON Semiconductor yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2@20mA@2A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 2000@2A@2 V|300@4A@2V. It has a maximum collector emitter saturation voltage of 1.5@20mA@2A V. Its maximum power dissipation is 45000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

6 Stück: Versand in vsl. 3 Tagen

    Total0,78 €Price for 1

    • Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2419+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      Malaysia
      • In Stock: 6 Stück
      • Price: 0,7809 €