Compliant | |
EAR99 | |
Active | |
8541.21.00.95 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Single | |
1 | |
12 | |
12 | |
5 | |
1.15@0.01A@1A | |
0.04@0.005A@0.05A|0.1@0.002A@0.1A|0.06@0.01A@0.1A|0.225@0.05A@0.5A|0.44@0.1A@1A | |
1 | |
100 | |
200@10mA@2V|100@500mA@2V|75@1A@2V | |
1100 | |
200(Min) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.75(Max) |
Verpackungsbreite | 2 |
Verpackungslänge | 2 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | DFN |
Lieferantenverpackung | WDFN EP |
3 | |
Leitungsform | No Lead |
The versatility of this PNP NSS12100UW3TCG GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.