onsemiNSS12100UW3TCGGP BJT

Trans GP BJT PNP 12V 1A 1100mW 3-Pin WDFN EP T/R

The versatility of this PNP NSS12100UW3TCG GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

1.249 Stück: morgen versandbereit

    Total0,28 €Price for 1

    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2151+
      Manufacturer Lead Time:
      11 Wochen
      Minimum Of :
      1
      Maximum Of:
      1249
      Country Of origin:
      Malaysia
         
      • Price: 0,2823 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2151+
      Manufacturer Lead Time:
      11 Wochen
      Country Of origin:
      Malaysia
      • In Stock: 1.249 Stück
      • Price: 0,2823 €