| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.7 mm |
| Verpackungsbreite | 0.85 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SC-89 |
| Lieferantenverpackung | SC-89 |
| 3 |
The versatility of this NPN NSS20101JT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |