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onsemiNSS30071MR6T1GGP BJT

Trans GP BJT NPN 30V 0.7A 665mW 6-Pin SC-74 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS30071MR6T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 665 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.