onsemiNSS40200LT1GGP BJT

Trans GP BJT PNP 40V 2A 710mW 3-Pin SOT-23 T/R

Do you require a transistor in your circuit operating in the high-voltage range? This PNP NSS40200LT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part

Auf Lager: 230.650 Stück

Regional Inventory: 2.850

    Total0,25 €Price for 1

    2.850 auf Lager: morgen versandbereit

    • Service Fee  6,10 €

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2316+
      Manufacturer Lead Time:
      9 Wochen
      Minimum Of :
      1
      Maximum Of:
      2850
      Country Of origin:
      China
         
      • Price: 0,2528 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2316+
      Manufacturer Lead Time:
      9 Wochen
      Country Of origin:
      China
      • In Stock: 2.850 Stück
      • Price: 0,2528 €
    • Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2228+
      Manufacturer Lead Time:
      30 Wochen
      Country Of origin:
      China
      • In Stock: 227.800 Stück
      • Price: 0,0568 €