onsemiNSS40301MZ4T1GGP BJT

Trans GP BJT NPN 40V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS40301MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

772 Stück: Versand in vsl. 10 Tagen

    Total0,24 €Price for 1

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2207+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      Malaysia
      • In Stock: 772 Stück
      • Price: 0,2375 €