onsemiNSS60600MZ4T1GGP BJT

Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Compared to other transistors, the PNP NSS60600MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

9 Stück: morgen versandbereit

    Total0,15 €Price for 1

    • Service Fee  6,10 €

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2307+
      Manufacturer Lead Time:
      10 Wochen
      Minimum Of :
      1
      Maximum Of:
      9
      Country Of origin:
      Malaysia
         
      • Price: 0,1525 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2307+
      Manufacturer Lead Time:
      10 Wochen
      Country Of origin:
      Malaysia
      • In Stock: 9 Stück
      • Price: 0,1525 €