onsemiNST3946DXV6T1GGP BJT

Trans GP BJT NPN/PNP 40V 0.2A 500mW 6-Pin SOT-563 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their npn and PNP NST3946DXV6T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6@NPN|5@PNP V.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2320+
      Manufacturer Lead Time:
      11 Wochen
      Country Of origin:
      China
      • In Stock: 4.923 Stück
      • Price: 0,3463 €
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      Date Code:
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      • In Stock: 12.000 Stück
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