| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.37 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-1123 |
| Stiftanzahl | 3 |
| Leitungsform | Flat |
Superior characteristics of this NST847BF3T5G RF amplifier from ON Semiconductor make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This product's minimum DC current gain is 200@2mA@5 V. It has a maximum collector emitter saturation voltage of 0.25@0.5mA@10mA|0.6@5mA@100mA V. This RF transistor has an operating temperature range of -55 °C to 150 °C.
