| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.37 mm |
| Verpackungsbreite | 0.8 mm |
| Verpackungslänge | 1 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-963 |
| 6 | |
| Leitungsform | Flat |
Designed with semiconductor technology, this NST847BPDP6T5G RF amplifier from ON Semiconductor easily operates at high RF frequencies. This product's minimum DC current gain is 200@2mA@5 V@NPN|220@2mA@5V@PNP. It has a maximum collector emitter saturation voltage of 0.25@0.5mA@10mA|0.6@5mA@100mA@NPN|0.3@0.5mA@10mA|0.7@5mA@100mA@PNP V. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |