onsemiNSVBC858CLT1GGP BJT
Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 5 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| -55 to 150 | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 15 | |
| 420@2mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Use this versatile PNP NSVBC858CLT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |