onsemiNSVDTA115EET1GDigital-BJT

Trans Digital BJT PNP 50V 0.1A 600mW 3-Pin SOT-416 T/R Automotive AEC-Q101

In contrast to traditional transistors, ON Semiconductor's PNP NSVDTA115EET1G digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 600 mW. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

18.000 Stück: Versand in vsl. 3 Tagen

    Total71,40 €Price for 3000

    • (3000)

      Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2340+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 18.000 Stück
      • Price: 0,0238 €