onsemiNSVMUN5333DW1T1GDigital-BJT
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@0.3mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor's npn and PNP NSVMUN5333DW1T1G digital transistor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |