| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05 mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | Chip FET |
| Lieferantenverpackung | Chip FET |
| Stiftanzahl | 8 |
| Leitungsform | Flat |
Use ON Semiconductor's NTHD3100CT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
