| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 5 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | SO-FL EP |
| Stiftanzahl | 5 |
| Leitungsform | Flat |
Looking for a component that can both amplify and switch between signals within your circuit? The NTMFS5C670NLT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 3600 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
