NXP SemiconductorsPBSS4160QAZGP BJT
Trans GP BJT NPN 60V 1A 1000mW 3-Pin DFN-D EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.36(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 1.1 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | DFN-D EP |
| 3 |
If you require a general purpose BJT that can handle high voltages, then the NPN PBSS4160QAZ BJT, developed by NXP Semiconductors, is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |